Nanoscale strained-Si/SiGe and double-gate MOSFET modeling

192 p.

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Bibliographic Details
Main Author:	Karthik Chandrasekaran
Other Authors:	Subhash Chander Ruatagi
Format:	Theses and Dissertations
Published:	2010
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:	https://hdl.handle.net/10356/39174
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Institution:	Nanyang Technological University

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