Verification of selected electron beam induced current (EBIC) techniques
The diffusion lengths of materials within semiconductor devices have a very strong impact on device performance. Therefore, there is a need to establish a method that is capable of determining the diffusion length accurately within a semiconductor device. By using the scanning electron microscope (S...
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/4104 |
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| Institution: | Nanyang Technological University |
| Summary: | The diffusion lengths of materials within semiconductor devices have a very strong impact on device performance. Therefore, there is a need to establish a method that is capable of determining the diffusion length accurately within a semiconductor device. By using the scanning electron microscope (SEM) operating in the electron beam-induced current (EBIC) mode. |
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