Verification of selected electron beam induced current (EBIC) techniques
The diffusion lengths of materials within semiconductor devices have a very strong impact on device performance. Therefore, there is a need to establish a method that is capable of determining the diffusion length accurately within a semiconductor device. By using the scanning electron microscope (S...
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格式: | Theses and Dissertations |
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2008
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在線閱讀: | http://hdl.handle.net/10356/4104 |
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