Verification of selected electron beam induced current (EBIC) techniques

Verification of selected electron beam induced current (EBIC) techniques

The diffusion lengths of materials within semiconductor devices have a very strong impact on device performance. Therefore, there is a need to establish a method that is capable of determining the diffusion length accurately within a semiconductor device. By using the scanning electron microscope (S...

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Main Author: Ang, Alex Yong Guan
Other Authors: Ong, Vincent Keng Sian
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:http://hdl.handle.net/10356/4104
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Institution: Nanyang Technological University
id sg-ntu-dr.10356-4104
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spelling sg-ntu-dr.10356-41042023-07-04T15:12:44Z Verification of selected electron beam induced current (EBIC) techniques Ang, Alex Yong Guan Ong, Vincent Keng Sian School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors The diffusion lengths of materials within semiconductor devices have a very strong impact on device performance. Therefore, there is a need to establish a method that is capable of determining the diffusion length accurately within a semiconductor device. By using the scanning electron microscope (SEM) operating in the electron beam-induced current (EBIC) mode. Master of Science (Integrated Circuit Design) 2008-09-17T09:44:32Z 2008-09-17T09:44:32Z 2003 2003 Thesis http://hdl.handle.net/10356/4104 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Ang, Alex Yong Guan
Verification of selected electron beam induced current (EBIC) techniques
description The diffusion lengths of materials within semiconductor devices have a very strong impact on device performance. Therefore, there is a need to establish a method that is capable of determining the diffusion length accurately within a semiconductor device. By using the scanning electron microscope (SEM) operating in the electron beam-induced current (EBIC) mode.
author2 Ong, Vincent Keng Sian
author_facet Ong, Vincent Keng Sian
Ang, Alex Yong Guan
format Theses and Dissertations
author Ang, Alex Yong Guan
author_sort Ang, Alex Yong Guan
title Verification of selected electron beam induced current (EBIC) techniques
title_short Verification of selected electron beam induced current (EBIC) techniques
title_full Verification of selected electron beam induced current (EBIC) techniques
title_fullStr Verification of selected electron beam induced current (EBIC) techniques
title_full_unstemmed Verification of selected electron beam induced current (EBIC) techniques
title_sort verification of selected electron beam induced current (ebic) techniques
publishDate 2008
url http://hdl.handle.net/10356/4104
_version_ 1772827213622673408

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