Reliability modeling for ULSI interconnects

• المؤلف الرئيسي: Hou, Yue Jin
• مؤلفون آخرون: Tan Cher Ming
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/42101

Electromigration (EM) and stress-induced voiding (SIV) are the two major reliability concerns for metal interconnects in integrated circuits. In particular, with the dimensions of interconnect scaled into nano regime and the inclusion of low-k materials as dielectrics, the reliability aspects for on...