Fabrication of InGaP high electron mobility transistors by electron beam technique
Recently, there has been great interest in the development of the InxGa|.xP material system as an alternative to AlyGai_yAs, for applications, such as in high electron mobility transistors, heterojunction bipolar transistors and diode lasers. This is attributed to the several advantages that InxG...
محفوظ في:
| المؤلف الرئيسي: | |
|---|---|
| مؤلفون آخرون: | |
| التنسيق: | Theses and Dissertations |
| منشور في: |
2008
|
| الموضوعات: | |
| الوصول للمادة أونلاين: | http://hdl.handle.net/10356/4282 |
| الوسوم: |
إضافة وسم
لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
|
| المؤسسة: | Nanyang Technological University |
| الملخص: | Recently, there has been great interest in the development of the InxGa|.xP material
system as an alternative to AlyGai_yAs, for applications, such as in high electron
mobility transistors, heterojunction bipolar transistors and diode lasers. This is
attributed to the several advantages that InxGai.xP has over AlyGai.yAs. InxGai_xP does
not appear to exhibit problems with donor-related deep traps, which can cause
instabilities in the threshold voltage and transconductance of the transistor. In
addition, the InxGai_xP/GaAs heterointerface has been shown to have a low carrier
recombination velocity, and can be selectively wet etched in HCl-based solutions.
Therefore, this thesis presents the device fabrication and characterisation of the
InxGai.xP/In0.2oGao.8oAs HEMT. |
|---|