Cu metallization and dielectric removal for failure analysis of ICs

• 主要作者: Siah, Yu Wen.
• 其他作者: Gan Chee Lip
• 格式: Final Year Project
• 語言: English
• 出版: 2012
• 主題: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• 在線閱讀: http://hdl.handle.net/10356/48443
• 機構: Nanyang Technological University

Although a defect may be well understood electrically in the recent years, capturing the anomaly into image remains necessary to verify the defect location. As technology further develops, ICs nowadays have more than one interconnect layer. Hence, it is necessary to first remove the overlying layers...