Cu metallization and dielectric removal for failure analysis of ICs

• Main Author: Siah, Yu Wen.
• Other Authors: Gan Chee Lip
• Format: Final Year Project
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• Online Access: http://hdl.handle.net/10356/48443
• Institution: Nanyang Technological University

Although a defect may be well understood electrically in the recent years, capturing the anomaly into image remains necessary to verify the defect location. As technology further develops, ICs nowadays have more than one interconnect layer. Hence, it is necessary to first remove the overlying layers...