Cu metallization and dielectric removal for failure analysis of ICs

• المؤلف الرئيسي: Siah, Yu Wen.
• مؤلفون آخرون: Gan Chee Lip
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/48443

Although a defect may be well understood electrically in the recent years, capturing the anomaly into image remains necessary to verify the defect location. As technology further develops, ICs nowadays have more than one interconnect layer. Hence, it is necessary to first remove the overlying layers...