Tantalum-based diffusion barriers for copper metallization

• المؤلف الرئيسي: Khin Maung Latt.
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/5062
• المؤسسة: Nanyang Technological University

The technological trend of shrinking integrated circuits in order to increase the logic density and improve the chip performance requires substituting copper for aluminium as interconnects in the deep sub-quarter micron ultra large scale integration (ULSI) devices. This trend is also reinforced by t...