Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication

As a main part of thermal stability studies , the atomic intermixing, new compound formation and phase transitions in the test structure were studied. Another aim of our experiments is to clarify the effect of different Cu deposition methods on the diffusion barrier performance.

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Bibliographic Details
Main Author:	Kim, Jae Hyung.
Other Authors:	School of Materials Science & Engineering
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Online Access:	http://hdl.handle.net/10356/5063
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-5063
record_format	dspace
spelling	sg-ntu-dr.10356-50632023-03-04T16:31:17Z Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication Kim, Jae Hyung. School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects As a main part of thermal stability studies , the atomic intermixing, new compound formation and phase transitions in the test structure were studied. Another aim of our experiments is to clarify the effect of different Cu deposition methods on the diffusion barrier performance. Master of Engineering (MSE) 2008-09-17T10:18:58Z 2008-09-17T10:18:58Z 2002 2002 Thesis http://hdl.handle.net/10356/5063 Nanyang Technological University 119 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects Kim, Jae Hyung. Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication
description	As a main part of thermal stability studies , the atomic intermixing, new compound formation and phase transitions in the test structure were studied. Another aim of our experiments is to clarify the effect of different Cu deposition methods on the diffusion barrier performance.
author2	School of Materials Science & Engineering
author_facet	School of Materials Science & Engineering Kim, Jae Hyung.
format	Theses and Dissertations
author	Kim, Jae Hyung.
author_sort	Kim, Jae Hyung.
title	Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication
title_short	Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication
title_full	Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication
title_fullStr	Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication
title_full_unstemmed	Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication
title_sort	copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication
publishDate	2008
url	http://hdl.handle.net/10356/5063
_version_	1759856973550977024

Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication

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