Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication

• 主要作者: Kim, Jae Hyung.
• 其他作者: School of Materials Science & Engineering
• 格式: Theses and Dissertations
• 出版: 2008
• 主題: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• 在線閱讀: http://hdl.handle.net/10356/5063

As a main part of thermal stability studies , the atomic intermixing, new compound formation and phase transitions in the test structure were studied. Another aim of our experiments is to clarify the effect of different Cu deposition methods on the diffusion barrier performance.