Study on copper electromigration reliability of the ULSI devices

• 主要作者: Low, Joon Kiat.
• 其他作者: Park, Hun Sub
• 格式: Theses and Dissertations
• 出版: 2008
• 主題: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• 在線閱讀: http://hdl.handle.net/10356/5086
• 機構: Nanyang Technological University

This project studies copper electromigration reliability with the help of engineers of Chartered Semiconductor Mfg. Ltd. As the processing of the copper metallization can greatly affect its reliability, experiments will be conducted to determine how some of the processing conditions and environments...