Synthesis and characterization of metal silicides nanostructures

Metal silicides have been used extensively in microelectronics devices, such as contacts and local interconnects. With increasing research and development of a bottomup fabrication approach for semiconducting and metallic nanostructures, metal silicides nanostructures can continue to play an importa...

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主要作者: Li, Shaozhou.
其他作者: School of Materials Science & Engineering
格式: Theses and Dissertations
語言:English
出版: 2013
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在線閱讀:http://hdl.handle.net/10356/51007
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機構: Nanyang Technological University
語言: English
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總結:Metal silicides have been used extensively in microelectronics devices, such as contacts and local interconnects. With increasing research and development of a bottomup fabrication approach for semiconducting and metallic nanostructures, metal silicides nanostructures can continue to play an important role in the next generation of nanoelectronics. In this research, the crystallography and growth mechanism of several transition metal-silicide nanostructures grown on silicon substrates were investigated with the assistance of focus-ion beam (FIB) microscopy and transmission electron microscopy (TEM) analysis.