Characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices

A preliminary study on the thermal stability of different spin-on dielectrics (SODs) has been conducted and it is found that generally organic SODs exhibited lower thermal stability, both in terms of weight loss and the highest allowable temperature, compared to inorganic SODs. On the other hand, th...

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Main Author:	Siew, Yong Kong.
Other Authors:	Sarkar, Gautam
Format:	Theses and Dissertations
Language:	English
Published:	2008
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Online Access:	http://hdl.handle.net/10356/5107
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-51072023-03-04T16:32:07Z Characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices Siew, Yong Kong. Sarkar, Gautam School of Materials Science & Engineering Hu, Xiao DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects A preliminary study on the thermal stability of different spin-on dielectrics (SODs) has been conducted and it is found that generally organic SODs exhibited lower thermal stability, both in terms of weight loss and the highest allowable temperature, compared to inorganic SODs. On the other hand, thin film characterization and thermal analysis techniques gave evidences which support the notion that the redistribution of Si-0 and Si-ll bonds is the reaction mechanism responsible for the chemical changes induced by heating. Curing of hydrogen silsesquioxane (HSQ) is found to be accompanied by weight loss, dimension change and change in dielectric properties. A three-stage curing model has been proposed based on the data collected. Doctor of Philosophy (SME) 2008-09-17T10:20:10Z 2008-09-17T10:20:10Z 2003 2003 Thesis http://hdl.handle.net/10356/5107 en Nanyang Technological University 228 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects Siew, Yong Kong. Characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices
description	A preliminary study on the thermal stability of different spin-on dielectrics (SODs) has been conducted and it is found that generally organic SODs exhibited lower thermal stability, both in terms of weight loss and the highest allowable temperature, compared to inorganic SODs. On the other hand, thin film characterization and thermal analysis techniques gave evidences which support the notion that the redistribution of Si-0 and Si-ll bonds is the reaction mechanism responsible for the chemical changes induced by heating. Curing of hydrogen silsesquioxane (HSQ) is found to be accompanied by weight loss, dimension change and change in dielectric properties. A three-stage curing model has been proposed based on the data collected.
author2	Sarkar, Gautam
author_facet	Sarkar, Gautam Siew, Yong Kong.
format	Theses and Dissertations
author	Siew, Yong Kong.
author_sort	Siew, Yong Kong.
title	Characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices
title_short	Characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices
title_full	Characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices
title_fullStr	Characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices
title_full_unstemmed	Characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices
title_sort	characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices
publishDate	2008
url	http://hdl.handle.net/10356/5107
_version_	1759857739538890752

Characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices

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