Characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices
A preliminary study on the thermal stability of different spin-on dielectrics (SODs) has been conducted and it is found that generally organic SODs exhibited lower thermal stability, both in terms of weight loss and the highest allowable temperature, compared to inorganic SODs. On the other hand, th...
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sg-ntu-dr.10356-51072023-03-04T16:32:07Z Characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices Siew, Yong Kong. Sarkar, Gautam School of Materials Science & Engineering Hu, Xiao DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects A preliminary study on the thermal stability of different spin-on dielectrics (SODs) has been conducted and it is found that generally organic SODs exhibited lower thermal stability, both in terms of weight loss and the highest allowable temperature, compared to inorganic SODs. On the other hand, thin film characterization and thermal analysis techniques gave evidences which support the notion that the redistribution of Si-0 and Si-ll bonds is the reaction mechanism responsible for the chemical changes induced by heating. Curing of hydrogen silsesquioxane (HSQ) is found to be accompanied by weight loss, dimension change and change in dielectric properties. A three-stage curing model has been proposed based on the data collected. Doctor of Philosophy (SME) 2008-09-17T10:20:10Z 2008-09-17T10:20:10Z 2003 2003 Thesis http://hdl.handle.net/10356/5107 en Nanyang Technological University 228 p. application/pdf |
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DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects |
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DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects Siew, Yong Kong. Characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices |
| description |
A preliminary study on the thermal stability of different spin-on dielectrics (SODs) has been conducted and it is found that generally organic SODs exhibited lower thermal stability, both in terms of weight loss and the highest allowable temperature, compared to inorganic SODs. On the other hand, thin film characterization and thermal analysis techniques gave evidences which support the notion that the redistribution of Si-0 and Si-ll bonds is the reaction mechanism responsible for the chemical changes induced by heating. Curing of hydrogen silsesquioxane (HSQ) is found to be accompanied by weight loss, dimension change and change in dielectric properties. A three-stage curing model has been proposed based on the data collected. |
| author2 |
Sarkar, Gautam |
| author_facet |
Sarkar, Gautam Siew, Yong Kong. |
| format |
Theses and Dissertations |
| author |
Siew, Yong Kong. |
| author_sort |
Siew, Yong Kong. |
| title |
Characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices |
| title_short |
Characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices |
| title_full |
Characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices |
| title_fullStr |
Characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices |
| title_full_unstemmed |
Characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices |
| title_sort |
characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices |
| publishDate |
2008 |
| url |
http://hdl.handle.net/10356/5107 |
| _version_ |
1759857739538890752 |