Monolithic integration of GAAS-to-SI by direct wafer bonding
While Silicon remains the dominant material today in matured very-large-scale-integration technology, most of the III-V compound semiconductors are direct bandgap materials with high electron mobilities that are highly sought in advanced space, automobile, and telecommunication applications. Hence,...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2014
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/61132 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | While Silicon remains the dominant material today in matured very-large-scale-integration technology, most of the III-V compound semiconductors are direct bandgap materials with high electron mobilities that are highly sought in advanced space, automobile, and telecommunication applications. Hence, it would be ideal to integrate the best of Silicon and III-V compound semiconductors. |
|---|