Monolithic integration of GAAS-to-SI by direct wafer bonding

While Silicon remains the dominant material today in matured very-large-scale-integration technology, most of the III-V compound semiconductors are direct bandgap materials with high electron mobilities that are highly sought in advanced space, automobile, and telecommunication applications. Hence,...

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Main Author: Yeo, Chiew Yong
Other Authors: Eugene A Fitzgerald
Format: Theses and Dissertations
Language:English
Published: 2014
Subjects:
Online Access:https://hdl.handle.net/10356/61132
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Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-61132
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spelling sg-ntu-dr.10356-611322020-11-12T08:39:11Z Monolithic integration of GAAS-to-SI by direct wafer bonding Yeo, Chiew Yong Eugene A Fitzgerald Yoon Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering While Silicon remains the dominant material today in matured very-large-scale-integration technology, most of the III-V compound semiconductors are direct bandgap materials with high electron mobilities that are highly sought in advanced space, automobile, and telecommunication applications. Hence, it would be ideal to integrate the best of Silicon and III-V compound semiconductors. DOCTOR OF PHILOSOPHY (EEE) 2014-06-05T06:05:31Z 2014-06-05T06:05:31Z 2013 2013 Thesis Yeo, C .Y. (2013). Monolithic integration of GAAS-to-SI by direct wafer bonding. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/61132 10.32657/10356/61132 en 218 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Yeo, Chiew Yong
Monolithic integration of GAAS-to-SI by direct wafer bonding
description While Silicon remains the dominant material today in matured very-large-scale-integration technology, most of the III-V compound semiconductors are direct bandgap materials with high electron mobilities that are highly sought in advanced space, automobile, and telecommunication applications. Hence, it would be ideal to integrate the best of Silicon and III-V compound semiconductors.
author2 Eugene A Fitzgerald
author_facet Eugene A Fitzgerald
Yeo, Chiew Yong
format Theses and Dissertations
author Yeo, Chiew Yong
author_sort Yeo, Chiew Yong
title Monolithic integration of GAAS-to-SI by direct wafer bonding
title_short Monolithic integration of GAAS-to-SI by direct wafer bonding
title_full Monolithic integration of GAAS-to-SI by direct wafer bonding
title_fullStr Monolithic integration of GAAS-to-SI by direct wafer bonding
title_full_unstemmed Monolithic integration of GAAS-to-SI by direct wafer bonding
title_sort monolithic integration of gaas-to-si by direct wafer bonding
publishDate 2014
url https://hdl.handle.net/10356/61132
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