Monolithic integration of GAAS-to-SI by direct wafer bonding
While Silicon remains the dominant material today in matured very-large-scale-integration technology, most of the III-V compound semiconductors are direct bandgap materials with high electron mobilities that are highly sought in advanced space, automobile, and telecommunication applications. Hence,...
Saved in:
Main Author: | Yeo, Chiew Yong |
---|---|
Other Authors: | Eugene A Fitzgerald |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2014
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/61132 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Low temperature direct wafer bonding of GaAs to Si via plasma activation
by: Xu, D. W., et al.
Published: (2014) -
Monolithic integration of Si-CMOS and III-V-on-Si through direct wafer bonding process
by: Lee, Kwang Hong, et al.
Published: (2018) -
Monolithic integration of GaAs/A1GaAS photonic devices using quantum well intermixing
by: Chan, Yuen Chuen, et al.
Published: (2008) -
Low temperature InP (chip) / Al2O3 / Si (wafer) direct bonding
by: Lin, Yiding
Published: (2015) -
Void density investigation of low temperature InP (chip) /Al2O3/Si (wafer) direct bonding
by: Shang, Ling Ru
Published: (2015)