Study and analysis of MRAM/RRAM-based circuit design for emerging applications
In recent years, CMOS-based conventional memory technologies including SRAM, DRAM, and Flash memories have become system performance bottleneck due to the speed gap between memory and logic, where they consume a large portion of power within systems, and not only that, they will soon face technology...
محفوظ في:
المؤلف الرئيسي: | Yang, Ziang |
---|---|
مؤلفون آخرون: | Goh Wang Ling |
التنسيق: | Thesis-Master by Coursework |
اللغة: | English |
منشور في: |
Nanyang Technological University
2018
|
الموضوعات: | |
الوصول للمادة أونلاين: | http://hdl.handle.net/10356/73107 |
الوسوم: |
إضافة وسم
لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
|
المؤسسة: | Nanyang Technological University |
اللغة: | English |
مواد مشابهة
-
Circuit design and analysis for emerging nonvolatile memory technology
بواسطة: Yang, Ziang
منشور في: (2016) -
Investigation of resistive switching and conduction mechanisms in oxide-based RRAM device for emerging nonvolatile memory applications
بواسطة: Fang, Zheng
منشور في: (2013) -
Device/Circuit/Architecture Co-Design of Reliable STT-MRAM
بواسطة: Pajouhi, Zoha, وآخرون
منشور في: (2019) -
Circuit design and analysis for emerging nonvolatile memory technology
بواسطة: Kurniawan, David Orlando
منشور في: (2017) -
In-memory computing by RRAM for machine learning
بواسطة: Ni, Leibin
منشور في: (2018)