Lateral black phosphorene P–N junctions formed via chemical doping for high performance near-infrared photodetector

Lateral black phosphorene P–N junctions formed via chemical doping for high performance near-infrared photodetector

Black phosphorene (BP), a newly discovered elemental two-dimensional material, is attractive for optoelectronic and photonic applications because of its unique in-plane anisotropy, thickness-dependent direct bandgap and high carrier mobility. Since its discovery, black phosphorene has become an appe...

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書目詳細資料
Main Authors:	Zhang, Shengli, Zeng, Haibo, Wang, Qi Jie, Yu, Xuechao
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2016
主題:	Solar cells Few-layer black phosphorene Chemical doping P–N junction Photodetector
在線閱讀:	https://hdl.handle.net/10356/80381 http://hdl.handle.net/10220/40502
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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