Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs

Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs

An analytical model for channel potential, subthreshold drain current, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) is obtained. The analytical model results are verified against simulations, good agreement is observed. The explicit expressions for drain cu...

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Bibliographic Details
Main Authors: Gu, Enyao, Hu, Guangxi, Xiang, Ping, Liu, Ran, Wang, Lingli, Zhou, Xing
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2016
Subjects:
semiconductor
analytical
Online Access:https://hdl.handle.net/10356/82172
http://hdl.handle.net/10220/41136
http://www.pphmj.com/abstract/8431.htm
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Institution: Nanyang Technological University
Language: English
Description
Summary:An analytical model for channel potential, subthreshold drain current, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) is obtained. The analytical model results are verified against simulations, good agreement is observed. The explicit expressions for drain current and subthreshold swing make the model suitable to be embedded in circuit simulation and design tools.

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