Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs

Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs

An analytical model for channel potential, subthreshold drain current, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) is obtained. The analytical model results are verified against simulations, good agreement is observed. The explicit expressions for drain cu...

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Main Authors: Gu, Enyao, Hu, Guangxi, Xiang, Ping, Liu, Ran, Wang, Lingli, Zhou, Xing
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2016
Subjects:
semiconductor
analytical
Online Access:https://hdl.handle.net/10356/82172
http://hdl.handle.net/10220/41136
http://www.pphmj.com/abstract/8431.htm
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-821722019-12-06T14:47:59Z Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs Gu, Enyao Hu, Guangxi Xiang, Ping Liu, Ran Wang, Lingli Zhou, Xing School of Electrical and Electronic Engineering semiconductor analytical An analytical model for channel potential, subthreshold drain current, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) is obtained. The analytical model results are verified against simulations, good agreement is observed. The explicit expressions for drain current and subthreshold swing make the model suitable to be embedded in circuit simulation and design tools. Published version 2016-08-16T06:40:42Z 2019-12-06T14:47:58Z 2016-08-16T06:40:42Z 2019-12-06T14:47:58Z 2014 Journal Article Xiang, P., Gu, E., Hu, G., Liu, R., Wang, L., & Zhou, X. (2014). Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs. Far East Journal of Electronics and Communications, 12(1), 39-48. 0973-7006 https://hdl.handle.net/10356/82172 http://hdl.handle.net/10220/41136 http://www.pphmj.com/abstract/8431.htm en Far East Journal of Electronics and Communications © 2014 Pushpa Publishing House. This paper was published in Far East Journal of Electronics and Communications and is made available as an electronic reprint (preprint) with permission of Pushpa Publishing House. The published version is available at: [http://www.pphmj.com/abstract/8431.htm]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 10 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic semiconductor
analytical
spellingShingle semiconductor
analytical
Gu, Enyao
Hu, Guangxi
Xiang, Ping
Liu, Ran
Wang, Lingli
Zhou, Xing
Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs
description An analytical model for channel potential, subthreshold drain current, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) is obtained. The analytical model results are verified against simulations, good agreement is observed. The explicit expressions for drain current and subthreshold swing make the model suitable to be embedded in circuit simulation and design tools.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Gu, Enyao
Hu, Guangxi
Xiang, Ping
Liu, Ran
Wang, Lingli
Zhou, Xing
format Article
author Gu, Enyao
Hu, Guangxi
Xiang, Ping
Liu, Ran
Wang, Lingli
Zhou, Xing
author_sort Gu, Enyao
title Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs
title_short Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs
title_full Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs
title_fullStr Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs
title_full_unstemmed Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs
title_sort analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate finfets
publishDate 2016
url https://hdl.handle.net/10356/82172
http://hdl.handle.net/10220/41136
http://www.pphmj.com/abstract/8431.htm
_version_ 1681044666809581568

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