Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs

• المؤلفون الرئيسيون: Gu, Enyao, Hu, Guangxi, Xiang, Ping, Liu, Ran, Wang, Lingli, Zhou, Xing
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2016
• الموضوعات: semiconductor; analytical
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/82172; http://hdl.handle.net/10220/41136; http://www.pphmj.com/abstract/8431.htm

An analytical model for channel potential, subthreshold drain current, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) is obtained. The analytical model results are verified against simulations, good agreement is observed. The explicit expressions for drain cu...