Bimodal weibull distribution of metal/high-κ gate stack TDDB-insights by scanning tunneling microscopy

• المؤلفون الرئيسيون: Yew, K. S., Bersuker, G., Ang, Diing Shenp
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/85052; http://hdl.handle.net/10220/11337
• المؤسسة: Nanyang Technological University

We provide new insights, via nanoscale TDDB testing, into the bimodal Weibull failure distribution obtained from area scaling of high-κ (HK) gate stack. Time-to-breakdown (BD) statistics for grain boundary (GB) and grain in a polycrystalline HK gate stack are obtained individually from localized con...