Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs

• المؤلفون الرئيسيون: Ajaykumar, Arjun, Zhou, Xing, Chiah, Siau Beh, Syamal, Binit
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2018
• الموضوعات: Carrier Number Fluctuation; Hooge Mobility Fluctuation
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/88219; http://hdl.handle.net/10220/44615
• المؤسسة: Nanyang Technological University

Low-frequency noise analysis is being used as a method to understand the nature of carrier transport in new material-based devices and to improve the sensitivity of sensors operating in the subthreshold regime. In this paper, we show that the (gm/Id)2 method used in carrier number fluctuation based noise formulation needs modification in the subthreshold regime. Based on the new formulation, many published results may require reinterpretation. The new formulation is validated with data extracted from the literature for III-V, nanowire, and high-K gate-stack-based devices.