Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs
Low-frequency noise analysis is being used as a method to understand the nature of carrier transport in new material-based devices and to improve the sensitivity of sensors operating in the subthreshold regime. In this paper, we show that the (gm/Id)2 method used in carrier number fluctuation based...
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| Main Authors: | , , , |
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| 格式: | Article |
| 語言: | English |
| 出版: |
2018
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| 在線閱讀: | https://hdl.handle.net/10356/88219 http://hdl.handle.net/10220/44615 |
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