Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs
Low-frequency noise analysis is being used as a method to understand the nature of carrier transport in new material-based devices and to improve the sensitivity of sensors operating in the subthreshold regime. In this paper, we show that the (gm/Id)2 method used in carrier number fluctuation based...
Saved in:
Main Authors: | , , , |
---|---|
其他作者: | |
格式: | Article |
語言: | English |
出版: |
2018
|
主題: | |
在線閱讀: | https://hdl.handle.net/10356/88219 http://hdl.handle.net/10220/44615 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|