Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs

Low-frequency noise analysis is being used as a method to understand the nature of carrier transport in new material-based devices and to improve the sensitivity of sensors operating in the subthreshold regime. In this paper, we show that the (gm/Id)2 method used in carrier number fluctuation based...

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Main Authors: Ajaykumar, Arjun, Zhou, Xing, Chiah, Siau Beh, Syamal, Binit
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2018
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在線閱讀:https://hdl.handle.net/10356/88219
http://hdl.handle.net/10220/44615
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