Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs

• المؤلفون الرئيسيون: Ajaykumar, Arjun, Zhou, Xing, Chiah, Siau Beh, Syamal, Binit
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2018
• الموضوعات: Carrier Number Fluctuation; Hooge Mobility Fluctuation
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/88219; http://hdl.handle.net/10220/44615
• المؤسسة: Nanyang Technological University

Low-frequency noise analysis is being used as a method to understand the nature of carrier transport in new material-based devices and to improve the sensitivity of sensors operating in the subthreshold regime. In this paper, we show that the (gm/Id)2 method used in carrier number fluctuation based...