Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs
Low-frequency noise analysis is being used as a method to understand the nature of carrier transport in new material-based devices and to improve the sensitivity of sensors operating in the subthreshold regime. In this paper, we show that the (gm/Id)2 method used in carrier number fluctuation based...
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Main Authors: | , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2018
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/88219 http://hdl.handle.net/10220/44615 |
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Institution: | Nanyang Technological University |
Language: | English |
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