GeSn lateral p-i-n photodetector on insulating substrate

GeSn lateral p-i-n photodetector on insulating substrate

We report the first experimental demonstration of germanium-tin (GeSn) lateral p-i-n photodetector on a novel GeSn-on-insulator (GeSnOI) substrate. The GeSnOI is formed by direct wafer bonding and layer transfer technique, which is promising for large-scale integration of nano-electronics and photon...

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Bibliographic Details
Main Authors: Xu, Shengqiang, Huang, Yi-Chiau, Lee, Kwang Hong, Wang, Wei, Dong, Yuan, Lei, Dian, Masudy-Panah, Saeid, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2019
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Photodetectors
Diode Characteristics
Online Access:https://hdl.handle.net/10356/88861
http://hdl.handle.net/10220/47645
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Institution: Nanyang Technological University
Language: English
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Summary:We report the first experimental demonstration of germanium-tin (GeSn) lateral p-i-n photodetector on a novel GeSn-on-insulator (GeSnOI) substrate. The GeSnOI is formed by direct wafer bonding and layer transfer technique, which is promising for large-scale integration of nano-electronics and photonics devices. The fabricated GeSnOI photodetector shows well-behaved diode characteristics with high Ion/Ioff ratio of ~4 orders of magnitude (at ± 1 V) at room temperature. A cutoff detection beyond 2 µm with photo responsivity (Rop) of 0.016 A/W was achieved at the wavelength (λ) of 2004 nm.

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