GeSn lateral p-i-n photodetector on insulating substrate

• Main Authors: Xu, Shengqiang, Huang, Yi-Chiau, Lee, Kwang Hong, Wang, Wei, Dong, Yuan, Lei, Dian, Masudy-Panah, Saeid, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: DRNTU::Engineering::Electrical and electronic engineering; Photodetectors; Diode Characteristics
• Online Access: https://hdl.handle.net/10356/88861; http://hdl.handle.net/10220/47645
• Institution: Nanyang Technological University

We report the first experimental demonstration of germanium-tin (GeSn) lateral p-i-n photodetector on a novel GeSn-on-insulator (GeSnOI) substrate. The GeSnOI is formed by direct wafer bonding and layer transfer technique, which is promising for large-scale integration of nano-electronics and photonics devices. The fabricated GeSnOI photodetector shows well-behaved diode characteristics with high Ion/Ioff ratio of ~4 orders of magnitude (at ± 1 V) at room temperature. A cutoff detection beyond 2 µm with photo responsivity (Rop) of 0.016 A/W was achieved at the wavelength (λ) of 2004 nm.