GeSn lateral p-i-n photodetector on insulating substrate

• المؤلفون الرئيسيون: Xu, Shengqiang, Huang, Yi-Chiau, Lee, Kwang Hong, Wang, Wei, Dong, Yuan, Lei, Dian, Masudy-Panah, Saeid, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering; Photodetectors; Diode Characteristics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/88861; http://hdl.handle.net/10220/47645

We report the first experimental demonstration of germanium-tin (GeSn) lateral p-i-n photodetector on a novel GeSn-on-insulator (GeSnOI) substrate. The GeSnOI is formed by direct wafer bonding and layer transfer technique, which is promising for large-scale integration of nano-electronics and photon...