Built-in electric field enhancement/retardation on intermixing

Built-in electric field enhancement/retardation on intermixing

The built-in electric field may impose a drift on charged point defects and may thus enhance or retard the intermixing during annealing. Electric field is built-in near the surface due to the pinning of surface Fermi level after argon plasma treatment on InP surfaces of InP/InGaAs quantum well sampl...

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書目詳細資料
Main Authors:	Xu, C. D., Chin, Mee Koy, Mei, Ting, Dong, Jian Rong, Chua, Soo Jin
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2010
主題:	DRNTU::Engineering::Electrical and electronic engineering
在線閱讀:	https://hdl.handle.net/10356/90694 http://hdl.handle.net/10220/6417
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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