Copper diffusion in Ti–Si–N layers formed by inductively coupled plasma implantation

Ternary Ti–Si–N refractory barrier films of 15 nm thick was prepared by low frequency, high density, inductively coupled plasma implantation of N into TixSiy substrate. This leads to the formation of Ti–N and Si–N compounds in the ternary film. Diffusion of copper in the barrier layer after annealin...

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Main Authors: Xu, S., Lai, M. Y., Yakovlev, N. L., Law, S. B., Chen, Z., Ee, Elden Yong Chiang
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
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Online Access:https://hdl.handle.net/10356/94597
http://hdl.handle.net/10220/8203
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-945972023-07-14T15:45:20Z Copper diffusion in Ti–Si–N layers formed by inductively coupled plasma implantation Xu, S. Lai, M. Y. Yakovlev, N. L. Law, S. B. Chen, Z. Ee, Elden Yong Chiang School of Materials Science & Engineering DRNTU::Engineering::Materials::Metallic materials Ternary Ti–Si–N refractory barrier films of 15 nm thick was prepared by low frequency, high density, inductively coupled plasma implantation of N into TixSiy substrate. This leads to the formation of Ti–N and Si–N compounds in the ternary film. Diffusion of copper in the barrier layer after annealing treatment at various temperatures was investigated using time-of-flight secondary ion mass spectrometer (ToF-SIMS) depth profiling, X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) and sheet resistance measurement. The current study found that barrier failure did not occur until 650 °C annealing for 30 min. The failure occurs by the diffusion of copper into the Ti–Si–N film to form Cu–Ti and Cu–N compounds. FESEM surface morphology and EDX show that copper compounds were formed on the ridge areas of the Ti–Si–N film. The sheet resistance verifies the diffusion of Cu into the Ti–Si–N film; there is a sudden drop in the resistance with Cu compound formation. This finding provides a simple and effective method of monitoring Cu diffusion in TiN-based diffusion barriers. Accepted version 2012-06-19T02:56:42Z 2019-12-06T18:58:56Z 2012-06-19T02:56:42Z 2019-12-06T18:58:56Z 2006 2006 Journal Article Ee, E. Y. C., Chen, Z., Law, S. B., Xu, S., Yakovlev, N. L., & Lai, M. Y. (2006). Copper diffusion in Ti-Si-N layers formed by inductively coupled plasma implantation. Applied surface science, 253 (2), 530-534. https://hdl.handle.net/10356/94597 http://hdl.handle.net/10220/8203 10.1016/j.apsusc.2005.12.152 en Applied surface science © 2006 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Applied Surface Science, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.apsusc.2005.12.152]. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials::Metallic materials
spellingShingle DRNTU::Engineering::Materials::Metallic materials
Xu, S.
Lai, M. Y.
Yakovlev, N. L.
Law, S. B.
Chen, Z.
Ee, Elden Yong Chiang
Copper diffusion in Ti–Si–N layers formed by inductively coupled plasma implantation
description Ternary Ti–Si–N refractory barrier films of 15 nm thick was prepared by low frequency, high density, inductively coupled plasma implantation of N into TixSiy substrate. This leads to the formation of Ti–N and Si–N compounds in the ternary film. Diffusion of copper in the barrier layer after annealing treatment at various temperatures was investigated using time-of-flight secondary ion mass spectrometer (ToF-SIMS) depth profiling, X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) and sheet resistance measurement. The current study found that barrier failure did not occur until 650 °C annealing for 30 min. The failure occurs by the diffusion of copper into the Ti–Si–N film to form Cu–Ti and Cu–N compounds. FESEM surface morphology and EDX show that copper compounds were formed on the ridge areas of the Ti–Si–N film. The sheet resistance verifies the diffusion of Cu into the Ti–Si–N film; there is a sudden drop in the resistance with Cu compound formation. This finding provides a simple and effective method of monitoring Cu diffusion in TiN-based diffusion barriers.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Xu, S.
Lai, M. Y.
Yakovlev, N. L.
Law, S. B.
Chen, Z.
Ee, Elden Yong Chiang
format Article
author Xu, S.
Lai, M. Y.
Yakovlev, N. L.
Law, S. B.
Chen, Z.
Ee, Elden Yong Chiang
author_sort Xu, S.
title Copper diffusion in Ti–Si–N layers formed by inductively coupled plasma implantation
title_short Copper diffusion in Ti–Si–N layers formed by inductively coupled plasma implantation
title_full Copper diffusion in Ti–Si–N layers formed by inductively coupled plasma implantation
title_fullStr Copper diffusion in Ti–Si–N layers formed by inductively coupled plasma implantation
title_full_unstemmed Copper diffusion in Ti–Si–N layers formed by inductively coupled plasma implantation
title_sort copper diffusion in ti–si–n layers formed by inductively coupled plasma implantation
publishDate 2012
url https://hdl.handle.net/10356/94597
http://hdl.handle.net/10220/8203
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