Copper diffusion in Ti–Si–N layers formed by inductively coupled plasma implantation
Ternary Ti–Si–N refractory barrier films of 15 nm thick was prepared by low frequency, high density, inductively coupled plasma implantation of N into TixSiy substrate. This leads to the formation of Ti–N and Si–N compounds in the ternary film. Diffusion of copper in the barrier layer after annealin...
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Main Authors: | , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2012
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/94597 http://hdl.handle.net/10220/8203 |
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Institution: | Nanyang Technological University |
Language: | English |
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