Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects

Electromigration (EM) in copper dual-damascene interconnects with extensions(also described as overhang regions or reservoirs) in the upper metal (M2) were investigated. It was found that as the extension length increases from 0 to 60 nm, the median-time-to-failure increased from 50 to 140 h, repres...

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Main Authors: Shao, W., Chen, Z., Tu, K. N., Gusak, A. M., Gan, Zhenghao, Mhaisalkar, Subodh Gautam, Li, Hong Yu
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
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Online Access:https://hdl.handle.net/10356/94915
http://hdl.handle.net/10220/7699
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-949152023-07-14T15:46:06Z Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects Shao, W. Chen, Z. Tu, K. N. Gusak, A. M. Gan, Zhenghao Mhaisalkar, Subodh Gautam Li, Hong Yu School of Materials Science & Engineering DRNTU::Engineering::Materials Electromigration (EM) in copper dual-damascene interconnects with extensions(also described as overhang regions or reservoirs) in the upper metal (M2) were investigated. It was found that as the extension length increases from 0 to 60 nm, the median-time-to-failure increased from 50 to 140 h, representing a ∼200% improvement in lifetimes. However, further increment of the extension length from 60 to 120 nm did not result in any significant improvement in EM lifetimes. Based on calculations of current densities in the reservoir regions and recently reported nucleation, void movement, and agglomeration-based EM phenomena, it is proposed that there is a critical extension length beyond which increasing extension lengths will not lead to longer EM lifetimes. Published version 2012-04-09T07:49:11Z 2019-12-06T19:04:36Z 2012-04-09T07:49:11Z 2019-12-06T19:04:36Z 2006 2006 Journal Article Gan, Z., Shao, W., Mhaisalkar, S. G., Chen, Z., Li, H., Tu, K. N., et. al. (2006). Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects. Journal of materials research, 21(9), 2241-2245. https://hdl.handle.net/10356/94915 http://hdl.handle.net/10220/7699 10.1557/JMR.2006.0270 en Journal of materials research © 2006 Materials Research Society. This paper was published in Journal of Materials Research and is made available as an electronic reprint (preprint) with permission of Materials Research Society. The paper can be found at the following DOI: [http://dx.doi.org/10.1557/JMR.2006.0270].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 5 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials
spellingShingle DRNTU::Engineering::Materials
Shao, W.
Chen, Z.
Tu, K. N.
Gusak, A. M.
Gan, Zhenghao
Mhaisalkar, Subodh Gautam
Li, Hong Yu
Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects
description Electromigration (EM) in copper dual-damascene interconnects with extensions(also described as overhang regions or reservoirs) in the upper metal (M2) were investigated. It was found that as the extension length increases from 0 to 60 nm, the median-time-to-failure increased from 50 to 140 h, representing a ∼200% improvement in lifetimes. However, further increment of the extension length from 60 to 120 nm did not result in any significant improvement in EM lifetimes. Based on calculations of current densities in the reservoir regions and recently reported nucleation, void movement, and agglomeration-based EM phenomena, it is proposed that there is a critical extension length beyond which increasing extension lengths will not lead to longer EM lifetimes.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Shao, W.
Chen, Z.
Tu, K. N.
Gusak, A. M.
Gan, Zhenghao
Mhaisalkar, Subodh Gautam
Li, Hong Yu
format Article
author Shao, W.
Chen, Z.
Tu, K. N.
Gusak, A. M.
Gan, Zhenghao
Mhaisalkar, Subodh Gautam
Li, Hong Yu
author_sort Shao, W.
title Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects
title_short Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects
title_full Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects
title_fullStr Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects
title_full_unstemmed Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects
title_sort reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects
publishDate 2012
url https://hdl.handle.net/10356/94915
http://hdl.handle.net/10220/7699
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