Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects

Electromigration (EM) in copper dual-damascene interconnects with extensions(also described as overhang regions or reservoirs) in the upper metal (M2) were investigated. It was found that as the extension length increases from 0 to 60 nm, the median-time-to-failure increased from 50 to 140 h, repres...

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Main Authors: Shao, W., Chen, Z., Tu, K. N., Gusak, A. M., Gan, Zhenghao, Mhaisalkar, Subodh Gautam, Li, Hong Yu
其他作者: School of Materials Science & Engineering
格式: Article
語言:English
出版: 2012
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在線閱讀:https://hdl.handle.net/10356/94915
http://hdl.handle.net/10220/7699
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機構: Nanyang Technological University
語言: English