Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects

• المؤلفون الرئيسيون: Shao, W., Chen, Z., Tu, K. N., Gusak, A. M., Gan, Zhenghao, Mhaisalkar, Subodh Gautam, Li, Hong Yu
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/94915; http://hdl.handle.net/10220/7699

Electromigration (EM) in copper dual-damascene interconnects with extensions(also described as overhang regions or reservoirs) in the upper metal (M2) were investigated. It was found that as the extension length increases from 0 to 60 nm, the median-time-to-failure increased from 50 to 140 h, repres...