Barrier properties of thin Au/Ni–P under bump metallization for Sn–3.5Ag solder

Electroless Ni–P with a thin layer of immersion gold has been considered as a promising under bump metallization (UBM) for low-cost flip–chip technology. However, the presence of P in electroless Ni–P causes complicated interfacial reactions, which affect the reliability of solder joint. In this wor...

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Bibliographic Details
Main Authors: Kumar, Aditya, He, Min, Chen, Zhong
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/95228
http://hdl.handle.net/10220/9385
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Institution: Nanyang Technological University
Language: English
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