Barrier properties of thin Au/Ni–P under bump metallization for Sn–3.5Ag solder

• Main Authors: Kumar, Aditya, He, Min, Chen, Zhong
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• Online Access: https://hdl.handle.net/10356/95228; http://hdl.handle.net/10220/9385
• Institution: Nanyang Technological University

Electroless Ni–P with a thin layer of immersion gold has been considered as a promising under bump metallization (UBM) for low-cost flip–chip technology. However, the presence of P in electroless Ni–P causes complicated interfacial reactions, which affect the reliability of solder joint. In this wor...