Multiple-pulse laser thermal annealing for the formation of Co-silicided junction
Formation of Co-silicide contact layers on narrow silicon regions using multiple-pulse excimer laser annealing is demonstrated. Excellent performance of junction leakage behavior can be attained on narrow-wi...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2012
|
| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/95649 http://hdl.handle.net/10220/8339 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| 總結: | Formation of Co-silicide contact layers on narrow
silicon regions using multiple-pulse excimer laser annealing is
demonstrated. Excellent performance of junction leakage behavior
can be attained on narrow-width n+/p and p+/n junction
as compared with standard rapid thermal annealed samples.
Liquid-phase epitaxial Co-silicide regrowth has been found to
occur and create a smooth and abrupt silicide/Si interface with
high junction integrity using multiple-pulse laser annealing. Heat confinement created by the shallow trench isolation surrounding
the narrow-width n+/p and p+/n junctions has minimized rapid
quenching that might result in an amorphous structure. This has
facilitated the crystallization of Co-silicide with multiple-pulse
laser annealing. |
|---|