Multiple-pulse laser thermal annealing for the formation of Co-silicided junction

• Main Authors: Lee, Pooi See, Pey, Kin Leong, Chow, F. L., Tang, L. J., Tung, Chih Hang, Wang, X. C., Lim, G. C.
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/95649; http://hdl.handle.net/10220/8339
• Institution: Nanyang Technological University

Formation of Co-silicide contact layers on narrow silicon regions using multiple-pulse excimer laser annealing is demonstrated. Excellent performance of junction leakage behavior can be attained on narrow-width n+/p and p+/n junction as compared with standard rapid thermal annealed samples. Liquid-phase epitaxial Co-silicide regrowth has been found to occur and create a smooth and abrupt silicide/Si interface with high junction integrity using multiple-pulse laser annealing. Heat confinement created by the shallow trench isolation surrounding the narrow-width n+/p and p+/n junctions has minimized rapid quenching that might result in an amorphous structure. This has facilitated the crystallization of Co-silicide with multiple-pulse laser annealing.