Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure

• المؤلفون الرئيسيون: Li, S., Dong, Zhili, Maung Latt, K., Park, H. S., White, Timothy John
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97180; http://hdl.handle.net/10220/6894

Three mechanisms for the formation of Cu diffusion channels in the Ta layer of a Cu/Ta/SiO2/Si structure are proposed. First, it is suggested that stacking faults formed during the recovery process induce localized regions of high internal energy in the Ta layer, from which Cu channels originate. Se...