Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure

• Main Authors: Li, S., Dong, Zhili, Maung Latt, K., Park, H. S., White, Timothy John
• 其他作者: School of Materials Science & Engineering
• 格式: Article
• 語言: English
• 出版: 2011
• 主題: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• 在線閱讀: https://hdl.handle.net/10356/97180; http://hdl.handle.net/10220/6894

Three mechanisms for the formation of Cu diffusion channels in the Ta layer of a Cu/Ta/SiO2/Si structure are proposed. First, it is suggested that stacking faults formed during the recovery process induce localized regions of high internal energy in the Ta layer, from which Cu channels originate. Se...