Excellent surface passivation of silicon at low cost: Atomic layer deposited aluminium oxide from solar grade TMA
10.1109/PVSC.2013.6744372
Saved in:
Main Authors: | Lin, F., Nandakumar, N., Dielissen, B., Gortzen, R., Hoex, B. |
---|---|
Other Authors: | SOLAR ENERGY RESEARCH INST OF S'PORE |
Format: | Conference or Workshop Item |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/113257 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Efficient planar perovskite solar cells using passivated tin oxide as an electron transport layer
by: Lee, Yonghui, et al.
Published: (2018) -
Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineering
by: Ang, Diing Shenp, et al.
Published: (2016) -
Low-temperature surface passivation of moderately doped crystalline silicon by atomic-layer-deposited hafnium oxide films
by: Lin, F., et al.
Published: (2014) -
FUNCTIONAL THIN FILMS BY SPATIAL ATOMIC LAYER DEPOSITION FOR PHOTOVOLTAIC APPLICATIONS
by: NAOMI NANDAKUMAR
Published: (2017) -
The ALU+ concept: N-type silicon solar cells with surface-passivated screen-printed aluminum-alloyed rear emitter
by: Bock, R., et al.
Published: (2014)