Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuits

10.1109/TED.2006.885680

Saved in:

Bibliographic Details
Main Authors:	Shen, C., Yang, T., Li, M.-F., Wang, X., Foo, C.E., Samudra, G.S., Yeo, Y.-C., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	CMOSFETs Digital circuits Reliability Static random access memory (SRAM) Trapping
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/114505
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-114505
record_format	dspace
spelling	sg-nus-scholar.10635-1145052024-11-10T17:48:06Z Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuits Shen, C. Yang, T. Li, M.-F. Wang, X. Foo, C.E. Samudra, G.S. Yeo, Y.-C. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING CMOSFETs Digital circuits Reliability Static random access memory (SRAM) Trapping 10.1109/TED.2006.885680 IEEE Transactions on Electron Devices 53 12 3001-3010 IETDA 2014-12-02T08:05:31Z 2014-12-02T08:05:31Z 2006-12 Article Shen, C., Yang, T., Li, M.-F., Wang, X., Foo, C.E., Samudra, G.S., Yeo, Y.-C., Kwong, D.-L. (2006-12). Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuits. IEEE Transactions on Electron Devices 53 (12) : 3001-3010. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2006.885680 00189383 http://scholarbank.nus.edu.sg/handle/10635/114505 000242605300019 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	CMOSFETs Digital circuits Reliability Static random access memory (SRAM) Trapping
spellingShingle	CMOSFETs Digital circuits Reliability Static random access memory (SRAM) Trapping Shen, C. Yang, T. Li, M.-F. Wang, X. Foo, C.E. Samudra, G.S. Yeo, Y.-C. Kwong, D.-L. Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuits
description	10.1109/TED.2006.885680
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Shen, C. Yang, T. Li, M.-F. Wang, X. Foo, C.E. Samudra, G.S. Yeo, Y.-C. Kwong, D.-L.
format	Article
author	Shen, C. Yang, T. Li, M.-F. Wang, X. Foo, C.E. Samudra, G.S. Yeo, Y.-C. Kwong, D.-L.
author_sort	Shen, C.
title	Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuits
title_short	Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuits
title_full	Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuits
title_fullStr	Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuits
title_full_unstemmed	Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuits
title_sort	fast vth instability in hfo2 gate dielectric mosfets and its impact on digital circuits
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/114505
_version_	1821234344063139840

Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuits

Similar Items