Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuits

• Main Authors: Shen, C., Yang, T., Li, M.-F., Wang, X., Foo, C.E., Samudra, G.S., Yeo, Y.-C., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: CMOSFETs; Digital circuits; Reliability; Static random access memory (SRAM); Trapping
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/114505
• Institution: National University of Singapore

10.1109/TED.2006.885680