Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuits

• Main Authors: Shen, C., Yang, T., Li, M.-F., Wang, X., Foo, C.E., Samudra, G.S., Yeo, Y.-C., Kwong, D.-L.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: CMOSFETs; Digital circuits; Reliability; Static random access memory (SRAM); Trapping
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/114505
• 機構: National University of Singapore

10.1109/TED.2006.885680