$Should the Refractive Index at 633 nm Be Used to Characterize Silicon Nitride Films?$

Should the Refractive Index at 633 nm Be Used to Characterize Silicon Nitride Films?

10.1109/PVSC.2016.7750187

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Bibliographic Details
Main Authors:	HAMEIRI, ZIV, BOROJEVIC, NINO, MAI, LY, NANDAKUMAR, NAOMI, KIM, KYUNG, WINDERBAUM, SAUL
Other Authors:	SOLAR ENERGY RESEARCH INST OF S'PORE
Format:	Conference or Workshop Item
Published:	IEEE 2019
Subjects:	Science & Technology Technology Physical Sciences Energy & Fuels Engineering, Electrical & Electronic Physics, Applied Engineering Physics CRYSTALLINE SILICON PASSIVATION
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/155120
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Institution:	National University of Singapore

Description
Summary:	10.1109/PVSC.2016.7750187

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